MJD3055:COMPLEMENTARY SILICON POWER TRANSISTORS

The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance.

Key Features

  • STMicroelectronics PREFERRED SALESTYPES
  • ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T
  • SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX \"T4\")
Product Specifications
DescriptionVersionSize
DS0778: Complementary power transistors3.3187 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
MJD3055T4DPAKTape And Reel0.416500NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
MJD3055T4DPAKIndustrialEcopack2md_dp-wspc-to-wspc-252-wspc-dpak_smdpba19s6f-wspc-(mjd3055t4).pdf
md_dp-wspc-to-wspc-252-wspc-dpak_smdpba19s6f-wspc-(mjd3055t4).xml
Complementary power transistors MJD3055
md_dp-wspc-to-wspc-252-wspc-dpak_smdpba19s6f-wspc-(mjd3055t4).pdf MJD3055
md_dp-wspc-to-wspc-252-wspc-dpak_smdpba19s6f-wspc-(mjd3055t4).xml MJD3055