PD54008-E：RF Power LDMOS transistor
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for portable radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V
- New RF plastic package
Product Specifications
Application Notes
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD54008S-E | - | - | PowerSO-10RF (straight lead) | Tube | NEC | EAR99 | MOROCCO |
| PD54008-E | - | - | PowerSO-10RF (formed lead) | Tube | NEC | EAR99 | MOROCCO |
| PD54008TR-E | - | - | PowerSO-10RF (formed lead) | Tape And Reel | NEC | EAR99 | MOROCCO |
Quality & Reliability
