PD55003L-E:3W 12.5V 500MHz LDMOS in PowerFLAT plastic package

The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain, linearity and reliability of STH1LV latest LD-MOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.

PD55003L-E’s superior linearity performances makes it an ideal solution for car mobile radio.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT =3 W mith 17dB gain@500 MHz/12.5 V
  • New leadless plastic package
  • ESD protection
  • Supplied in tape and reel of 3 K units
  • In compliance with 2002/95/EC european directive
Product Specifications
DescriptionVersionSize
DS4622: RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs2.1256 KB
HW Model & CAD Libraries
DescriptionVersionSize
PD55003L-E ADS model1.0353 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
PD55003L-EPowerFLAT 5x5 HVTape And Reel--NECEAR99MALAYSIA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
PD55003L-EPowerFLAT 5x5 HVIndustrialEcopack2
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs PD55003L-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs PD55003L-E