PD85006L-E：6W 13.6V 870MHz LDMOS in PowerFLAT plastic package
The PD85006L-E is a common source N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.
PD85006L-E boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT. PD85006L-Es superior linearity performance makes it an ideal solution for mobile radio applications.
Key Features
- In compliance with the 2002/95/EC european directive
- Excellent thermal stability
- POUT
= 6 W with 15 dB gain @ 870 MHz / 13.6 V
- Common source configuration
- ESD protection
- Plastic package
Product Specifications
User Manuals
HW Model & CAD Libraries
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Product Evaluation Tools
| Part Number | Manufacturer | Description |
|---|
| STEVAL-TDR034V1 | | RF power module based on the PD85050S for mobile radio applications |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD85006L-E | PowerFLAT 5x5 HV | Tape And Reel | - | - | NEC | EAR99 | MALAYSIA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| PD85006L-E | PowerFLAT 5x5 HV | Industrial | Ecopack2 | |
