PD85025C：25W 13.6V 870MHz LDMOS in M243 ceramic package
The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile applications.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V
- BeO free package
- ESD protection
- In compliance with the 2002/95/EC european directive
Product Specifications
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD85025C | M243 | Loose Piece | - | - | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| PD85025C | M243 | Industrial | Ecopack1 | |
