SD57060-01:60W 28V HF to 1GHz LDMOS TRANSISTOR in flangeless package
The SD57060-01 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.
Key Features
- Excellent thermal stability
- POUT
= 60W with 13dB gain @ 945MHz
- Common source configuration
- In compliance with the 2002/95/EC european directive
- BeO free package
Product Specifications
Software Development Tools
Part Number | Manufacturer | Description |
---|
STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
---|
SD57060-01 | - | - | M250 | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|
SD57060-01 | M250 | Industrial | Ecopack1 | |