STAC4933:300W - 50V High Ruggedness HF/VHF DMOS in STAC177 package

The STAC4933 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V ISM applications up to 100 MHz.

Key Features

  • Improved ruggedness V(BR)DSS > 200 V
  • Excellent thermal stability
  • POUT = 300 W min. with 24 dB gain @ 30 MHz
  • STAC air cavity packaging technology - STAC® package
Product Specifications
DescriptionVersionSize
DS8848: RF power transistor: HF/VHF/UHF RF power N-channel MOSFET1.2356 KB
Application Notes
DescriptionVersionSize
AN3232: Mounting recommendations for STAC® and STAP® boltdown packages4.01 MB
AN2027: Mounting recommendations for ceramic DMOS packages2.447 KB
HW Model & CAD Libraries
DescriptionVersionSize
STAC4933 ADS model1.0340 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STAC4933STAC177BLoose Piece651000NECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STAC4933STAC177BIndustrialEcopack1
RF power transistor: HF/VHF/UHF RF power N-channel MOSFET STAC4933
Mounting recommendations for STAC® and STAP® boltdown packages STAC0912-250
Mounting recommendations for ceramic DMOS packages SD2918
Mounting recommendations for ceramic DMOS packages STAC4933