STAP85025S：RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
The STAP85025S is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at a frequency up to 1 GHz. The STAP85025S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP® ST advanced PowerSO-10 RF package. The STAP85025S superior linearity performance makes it an ideal solution for the car mobile radio.
The STAP® ST plastic package has been designed to offer high reliability and high power capability. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V
- Plastic package
- ESD protection
- In compliance with the 2002/95/EC European directive
Product Specifications
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STAP85025S | PowerSO 2 | Tube | - | - | NEC | EAR99 | - |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STAP85025S | PowerSO 2 | Industrial | Ecopack2 | |
