STB120N10F4:N-channel 100 V, 8 mOhm typ., 120 A STripFET(TM) DeepGATE(TM) Power MOSFET in D2PAK package
These devices are N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology. The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance.
Key Features
- N-channel enhancement mode
- Very low on-resistance
- Low gate charge
- 100% avalanche rated
Product Specifications
Application Notes
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
Part Number | Manufacturer | Description |
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ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
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STB120N10F4 | D2PAK | Tape And Reel | - | - | NEC | EAR99 | CHINA |
Quality & Reliability