STB33N60M2：N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Key Features
- Extremely low gate charge
- Lower RDS(on)
x area vs previous generation
- MDmesh™ II technology
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Product Specifications
Application Notes
Technical Notes & Articles
User Manuals
HW Model & CAD Libraries
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STB33N60M2 | D2PAK | Tape And Reel | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STB33N60M2 | D2PAK | Industrial | Ecopack2 | |
