STD6N60M2：N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in DPAK package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss ) profile
  • 100% avalanche tested
  • Zener-protected
Product Specifications
DescriptionVersionSize
DS9735: N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in D²PAK and DPAK packages3.01 MB
Application Notes
DescriptionVersionSize
AN4250: Fishbone diagram for power factor correction1.1772 KB
AN4829: Fishbone diagrams for a forward converter1.11 MB
AN4720: Half bridge resonant LLC converters and primary side MOSFET selection1.01 MB
AN4742: MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology1.01 MB
AN4406: MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies1.0652 KB
AN2842: Paralleling of power MOSFETs in PFC topology1.4896 KB
AN2344: Power MOSFET avalanche characteristics and ratings1.3880 KB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
Technical Notes & Articles
DescriptionVersionSize
TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products1.0657 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD6N60M2DPAKTape And Reel--NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STD6N60M2DPAKIndustrialEcopack2md_dp-wspc-to-wspc-252-wspc-dpak_todp-wspc-mq6pb6f.pdf
md_dp-wspc-to-wspc-252-wspc-dpak_todp-wspc-mq6pb6f.xml
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in D²PAK and DPAK packages STB6N60M2
Fishbone diagram for power factor correction STWA3N170
Fishbone diagrams for a forward converter STI21N65M5
Half bridge resonant LLC converters and primary side MOSFET selection L6699
MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology STP6N65M2
MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies STP6N65M2
Paralleling of power MOSFETs in PFC topology STWA3N170
Power MOSFET avalanche characteristics and ratings STWA3N170
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products STWA3N170
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
md_dp-wspc-to-wspc-252-wspc-dpak_todp-wspc-mq6pb6f.pdf STD6N60M2
md_dp-wspc-to-wspc-252-wspc-dpak_todp-wspc-mq6pb6f.xml STD6N60M2
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