STD7NS20：N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.
Key Features
- Typical RDS
(on) = 0.35
- 100% avalanche tested
- Extremely high dv/dt capability
- Add suffix \"T4\" for ordering in tape & reel
- Very low intrinsic capacitances
Product Specifications
Application Notes
User Manuals
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STD7NS20T4 | DPAK | Tape And Reel | - | - | NEC | EAR99 | CHINA |
Quality & Reliability
