STGD4M65DF2:Trench gate field-stop IGBT, M series 650 V, 4 A low loss

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
Product Specifications
DescriptionVersionSize
DS11397: Trench gate field-stop IGBT, M series 650 V, 4 A low loss4.01 MB
Application Notes
DescriptionVersionSize
AN4694: EMC design guides for motor control applications1.02 MB
AN4544: IGBT datasheet tutorial1.12 MB
HW Model & CAD Libraries
DescriptionVersionSize
STGD4M65DF2 PSpice model1.02 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-IGBT-FINDERSTIGBT product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STGD4M65DF2DPAKTape And Reel--NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STGD4M65DF2DPAKIndustrialEcopack2
Trench gate field-stop IGBT, M series 650 V, 4 A low loss STGD4M65DF2
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