STGWA30M65DF2:Trench gate field-stop IGBT M series, 650 V 30 A low loss

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key Features

  • 6 µs of minimum short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
Product Specifications
DescriptionVersionSize
DS11002: Trench gate field-stop IGBT, M series 650 V, 30 A low loss4.0725 KB
Application Notes
DescriptionVersionSize
AN4694: EMC design guides for motor control applications1.02 MB
AN4544: IGBT datasheet tutorial1.12 MB
HW Model & CAD Libraries
DescriptionVersionSize
STGWA30M65DF2 PSpice model1.04 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-IGBT-FINDERSTIGBT product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STGWA30M65DF2TO-247 long leadsTube2.61000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STGWA30M65DF2TO-247 long leadsIndustrialEcopack2
Trench gate field-stop IGBT, M series 650 V, 30 A low loss STGW30M65DF2
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IGBT datasheet tutorial STGWA30M65DF2
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