STH270N8F7-6:N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss /Ciss ratio for EMI immunity
  • High avalanche ruggedness
Product Specifications
DescriptionVersionSize
DS9394: N-channel 80 V, 0.0017 Ω typ., 180 A, STripFET™ F7 Power MOSFETs in H²PAK-2, H²PAK-6 and TO-220 packages4.01 MB
Application Notes
DescriptionVersionSize
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4789: Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance1.11006 KB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STH270N8F7-6 PSpice model1.09 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STH270N8F7-6H2PAK-6Tape And Reel3.81000NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STH270N8F7-6H2PAK-6IndustrialEcopack1
N-channel 80 V, 0.0017 Ω typ., 180 A, STripFET™ F7 Power MOSFETs in H²PAK-2, H²PAK-6 and TO-220 packages STH270N8F7-6
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance STH310N10F7-6
Power MOSFET: Rg impact on applications STL8DN6LF3
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STH270N8F7-6
Very low drop voltage regulators with inhibit KFXX