STPSC10H065-Y:Automotive 650 V power Schottky silicon carbide diode

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key Features

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • AEC-Q101 qualified
  • PPAP capable
  • ECOPACK® 2 compliant component
Product Specifications
DescriptionVersionSize
DS10437: Automotive 650 V power Schottky silicon carbide diode3.0173 KB
Application Notes
DescriptionVersionSize
AN4242: New generation of 650 V SiC diodes1.22 MB
Technical Notes & Articles
DescriptionVersionSize
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches4.0330 KB
HW Model & CAD Libraries
DescriptionVersionSize
STPSC10H065-Y PSpice model (.lib & .olb)1.0116 KB
Flyers
DescriptionVersionSize
Automotive-grade SiC diodes with very low forward voltage drop1.01 MB
Conference Papers
DescriptionVersionSize
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
Software Development Tools
Part NumberManufacturerDescription
ST-DIODE-FINDERSTDiode product finder application for Android and iOS
Sample & Buy
Part NumberUnit Price (US$) *QuantityPackagePacking TypeJunction Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STPSC10H065DY2.071100TO-220ACTube175NECEAR99CHINA
STPSC10H065GY-TR1.861100D2PAKTape And Reel175NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STPSC10H065DYTO-220ACAutomotiveEcopack2md_dk-wspc-do-wspc-220_bsdk2c151a4-wspc-(stpsc10h065dy)-wspc-wcp-wspc-ver2_signed.pdf
md_dk-wspc-do-wspc-220_bsdk2c151a4-wspc-(stpsc10h065dy)-wspc-wcp-wspc-ver2.xml
STPSC10H065GY-TRD2PAKAutomotiveEcopack2md_d2-wspc-d2pak_bsd2-wspc-3d09ay4.pdf
md_d2-wspc-d2pak_bsd2-wspc-3d09ay4.xml
Automotive 650 V power Schottky silicon carbide diode STPSC10H065-Y
New generation of 650 V SiC diodes STTH8R06
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches FLC21
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC10H065-Y
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Spice model tutorial for Power MOSFETs SCTWA50N120
md_dk-wspc-do-wspc-220_bsdk2c151a4-wspc-(stpsc10h065dy)-wspc-wcp-wspc-ver2_signed.pdf STPSC10H065-Y
md_dk-wspc-do-wspc-220_bsdk2c151a4-wspc-(stpsc10h065dy)-wspc-wcp-wspc-ver2.xml STPSC10H065-Y
md_d2-wspc-d2pak_bsd2-wspc-3d09ay4.pdf STPSC10H065-Y
md_d2-wspc-d2pak_bsd2-wspc-3d09ay4.xml STPSC10H065-Y