STPSC10H12:1200V Power Schottky Silicon Carbide diode

The SiC diode, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

Key Features

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
Product Specifications
DescriptionVersionSize
DS11566: 1200 V power Schottky silicon carbide diode1.0432 KB
Application Notes
DescriptionVersionSize
AN4242: New generation of 650 V SiC diodes1.22 MB
Technical Notes & Articles
DescriptionVersionSize
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches4.0330 KB
HW Model & CAD Libraries
DescriptionVersionSize
Silicon-carbide Schottky diode PSpice models (.lib & .olb)5.0180 KB
Presentations
DescriptionVersionSize
Silicon-carbide diode product presentation1.01022 KB
Flyers
DescriptionVersionSize
Automotive-grade SiC diodes with very low forward voltage drop1.01 MB
Silicon-carbide diodes1.01 MB
Selection Guides
DescriptionVersionSize
Diodes and rectifiers selection guide2.0815 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Products and solutions for solar energy1.01 MB
Conference Papers
DescriptionVersionSize
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
Software Development Tools
Part NumberManufacturerDescription
ST-DIODE-FINDERSTDiode product finder application for Android and iOS
Sample & Buy
Part NumberUnit Price (US$) *QuantityPackagePacking TypeJunction Temperature (°C) (max)ECCN (EU)ECCN (US)Country of Origin
STPSC10H12G-TR--D2PAKTape And Reel175NECEAR99-
STPSC10H12B-TR1--DPAK HV 2LTape And Reel175NECEAR99-
STPSC10H12D3.15950TO-220ACTube175NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STPSC10H12G-TRD2PAKIndustrialEcopack1 (*)
STPSC10H12B-TR1DPAK HV 2LIndustrialEcopack1
STPSC10H12DTO-220ACIndustrialEcopack2md_dk-wspc-do-wspc-220_bsdk-wspc-hc151y5.pdf
md_dk-wspc-do-wspc-220_bsdk-wspc-hc151y5.xml
1200 V power Schottky silicon carbide diode STPSC10H12
New generation of 650 V SiC diodes STTH8R06
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches FLC21
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STPSC12H065
Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches STTH15S12
Very low drop voltage regulators with inhibit KFXX
Description of UFDFPN5, UFDFPN8 and WFDFPN8 for STMicroelectronics EEPROMs and recommendations for use M95080-DRE
Spice model tutorial for Power MOSFETs SCTWA50N120
md_dk-wspc-do-wspc-220_bsdk-wspc-hc151y5.pdf STPSC10H12
md_dk-wspc-do-wspc-220_bsdk-wspc-hc151y5.xml STPSC10H12