2SD2719 Power transistor for low frequency applications

DataSheet
Feature
FeatureDarlington / Built-in damper diode / Built-in Zener diode
PolarityNPN
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameTSM
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.8A
Collector CurrentICP3.0A
Collector power dissipationPC0.8W
Collector-Base VoltageVCBO50V
Collector-emitter voltageVCEO60V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
DC Current Gain hFE (Min)hFEIC=1A
VCE=2V
2000-
Collector Emitter Saturation Voltage (Max)VCE(sat)IB=1mA
IC=1A
1.5V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
2SD2719(TE85L,F)Japan3000yes
Documents
Reliability InformationReliability Data[Jan,2014](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TTC007