2SJ680 Power MOSFET (P-ch single)

DataSheet
Feature
PolarityP-ch
Generationπ-MOSⅤ
RoHS Compatible Product(s) (#)Available
Package Information
Package Image
Toshiba Package NameNew PW-Mold2
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-2.5A
Power DissipationPD20W
Drain-Source voltageVDSS-200V
Drain-Source voltageVDSS-200V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-410pF
Total gate charge (Typ.)Qg-10nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V2.0Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TTC012