2SK1119 Power MOSFET (N-ch 700V《VDSS)

DataSheet
Feature
PolarityN-ch
Generationπ-MOSⅡ.5
RoHS Compatible Product(s) (#)Available
Package Information
Toshiba Package NameTO-220AB
Pins3
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID4A
Power DissipationPD100W
Drain-Source voltageVDSS1000V
Drain-Source voltageVDSS1000V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Typ.)Qg-60nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V3.8Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)