2SK2399 Power MOSFET (N-ch single 60V《VDSS≤150V)

DataSheet
Feature
PolarityN-ch
GenerationL²-π-MOSⅤ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameNew PW-Mold
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID5A
Power DissipationPD20W
Drain-Source voltageVDSS100V
Drain-Source voltageVDSS100V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Typ.)Qg-22nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4V0.3Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.23Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TA78M24F