2SK2610 Power MOSFET (N-ch 700V《VDSS)

DataSheet
Feature
PolarityN-ch
Generationπ-MOSⅢ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameTO-3P(N)
JEITASC-65
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID5A
Power DissipationPD150W
Drain-Source voltageVDSS900V
Drain-Source voltageVDSS900V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Typ.)Qg-45nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V2.5Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TTC0001