2SK3079A Radio-frequency power MOSFET

DataSheet
Feature
Application ScopeFRS/GMRS(470MHz)
PolarityN-ch
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePW-X
Pins4
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID3A
Power DissipationPD20W
Drain-Source voltageVDSS10V
Drain-Source voltageVDSS10V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Output Power (Min)POUTPIN=0.1W
Tc=25degC
VDD=4.5V
f=470MHz
2.24W
Documents
S-parameterS-parameter[Jan,2003] NEW(txt: 238KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteApplication Note[Oct,2011](PDF: 1782KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
RFM12U7X