2SK3079A Radio-frequency power MOSFET _ BDTIC a Leading Distributor in China

Characteristics	Symbol	Rating	Unit
Drain current	I_D	3	A
Power Dissipation	P_D	20	W
Drain-Source voltage	V_DSS	10	V
Drain-Source voltage	V_DSS	10	V

Characteristics	Symbol	Condition	Value	Unit
Output Power (Min)	P_OUT	P_IN=0.1W T_c=25degC V_DD=4.5V f=470MHz	2.24	W

S-parameter	S-parameter[Jan,2003] NEW	(txt: 238KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Application Note	Application Note[Oct,2011]	(PDF: 1782KB)
Application Note	Construction and Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 108KB)
Application Note	Maximum Ratings: Power MOSFET Application Notes[Oct,2004]	(PDF: 191KB)
Application Note	Electrical Characteristics: Power MOSFET Application Notes[Oct,2004]	(PDF: 182KB)
Application Note	Application Precautions: Power MOSFET Application Notes[Oct,2004]	(PDF: 303KB)
Application Note	Heat Sink Design: Power MOSFET Application Notes[Oct,2004]	(PDF: 237KB)
Catalog	Radio-Frequency Semiconductors[Feb,2015]	(PDF: 1320KB)
Catalog	Radio-Frequency Semiconductors Diodes[Sep,2006]	(PDF: 2219KB)
Catalog	Radio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006]	(PDF: 2873KB)
Catalog	High-Frequency Semiconductors Power Devices[Mar,2004]	(PDF: 2496KB)

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