DataSheet
Feature
Package Information
| Absolute Maximum Ratings
Electrical Characteristics
|
example | MOQ(pcs) | ReliabilityInformation | RoHS | |
---|---|---|---|---|
Orderable part number | Assembly bases | |||
2SK3476(TE12L,Q) | Japan | 1000 | yes |
S-parameter | S-parameter[Jan,2003] NEW | (txt: 238KB) |
---|---|---|
Reliability Information | Reliability Data[May,2016] | (PDF: 160KB) |
Environment Information | Certificate on Content of SVHC of REACH[Apr,2016] | (PDF: 43KB) |
Application Note | Application Note[Oct,2011] | (PDF: 2058KB) |
Application Note | Construction and Characteristics: Power MOSFET Application Notes[Oct,2004] | (PDF: 108KB) |
Application Note | Maximum Ratings: Power MOSFET Application Notes[Oct,2004] | (PDF: 191KB) |
Application Note | Electrical Characteristics: Power MOSFET Application Notes[Oct,2004] | (PDF: 182KB) |
Application Note | Application Precautions: Power MOSFET Application Notes[Oct,2004] | (PDF: 303KB) |
Application Note | Heat Sink Design: Power MOSFET Application Notes[Oct,2004] | (PDF: 237KB) |
Catalog | Radio-Frequency Semiconductors[Feb,2015] | (PDF: 1320KB) |
Catalog | Radio-Frequency Semiconductors Diodes[Sep,2006] | (PDF: 2219KB) |
Catalog | Radio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006] | (PDF: 2873KB) |
Catalog | High-Frequency Semiconductors Power Devices[Mar,2004] | (PDF: 2496KB) |