2SK3842 Power MOSFET (N-ch single 30V《VDSS≤60V)

DataSheet
Feature
PolarityN-ch
GenerationU-MOSⅢ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Toshiba Package NameTFP
Pins4
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID75A
Power DissipationPD125W
Drain-Source voltageVDSS60V
Drain-Source voltageVDSS60V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Typ.)Qg-196nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.0058Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)