2SK3880 Power MOSFET (N-ch 700V《VDSS)

DataSheet
Feature
PolarityN-ch
Generationπ-MOSⅣ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Toshiba Package NameTO-3P(N)IS
Pins3
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID6.5A
Power DissipationPD80W
Drain-Source voltageVDSS800V
Drain-Source voltageVDSS800V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-1500pF
Total gate charge (Typ.)Qg-35nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V1.7Ω
Documents
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)