JDH2S01FS High frequency Schottky barrier diode

DataSheet
Feature
Application ScopeVHF, UHF MIX
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamefSC
Pins2
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Forward CurrentIF0.03A
Reverse VoltageVR5V
Maximum (Peak) Reverse VoltageVRM5V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total Capacitance (Typ.)CTVR=0.2V0.6pF
Forward Voltage (Typ.)VFIF=2mA0.25V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
JDH2S01FS(TPL3)Japan10000yes
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogSmall and Medium Diodes Product Guide[Sep,2014](PDF: 1301KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
JDP2S02AFS