JDH2S02FS High frequency Schottky barrier diode

DataSheet
Feature
Application ScopeVHF, UHF MIX
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamefSC
Pins2
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Forward CurrentIF0.01A
Reverse VoltageVR10V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total Capacitance (Typ.)CTVR=0.2V0.3pF
Forward Voltage (Typ.)VFIF=1mA0.24V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
JDH2S02FS(TPL3)Japan10000yes
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogSmall and Medium Diodes Product Guide[Sep,2014](PDF: 1301KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
JDP2S02AFS