JDH2S02FS High frequency Schottky barrier diode _ BDTIC a Leading Distributor in China

JDH2S02FS High frequency Schottky barrier diode

DataSheet

Download Japanese version(PDF:261KB)
Download English version(PDF:181KB)

Feature

Application Scope	VHF, UHF MIX
RoHS Compatible Product(s) (#)	Available
Assembly bases	Japan

Package Information

Package Image
Toshiba Package Name	fSC
Pins	2
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Forward Current	I_F	0.01	A
Reverse Voltage	V_R	10	V

Electrical Characteristics

Characteristics	Symbol	Condition	Value	Unit
Total Capacitance (Typ.)	C_T	V_R=0.2V	0.3	pF
Forward Voltage (Typ.)	V_F	I_F=1mA	0.24	V

Order Information

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
JDH2S02FS(TPL3)	Japan	10000		yes

Documents

Reliability Information	Reliability Data[Dec,2013]	(PDF: 161KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Catalog	Small and Medium Diodes Product Guide[Sep,2014]	(PDF: 1301KB)
Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)
Catalog	Radio-Frequency Semiconductors Diodes[Sep,2006]	(PDF: 2219KB)
Catalog	Radio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006]	(PDF: 2873KB)
Catalog	High-Frequency Semiconductors Power Devices[Mar,2004]	(PDF: 2496KB)

JDP2S02AFS

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