MT3S21P Radio-frequency bipolar transistor

DataSheet
Feature
Application ScopeVHF/UHF band low noise amplifier
PolarityNPN
Number of Circuits1
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePW-Mini
JEITASC-62
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.08A
Collector power dissipationPC400mW
Junction temperatureTj150degC
Collector-emitter voltageVCEO6V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Insertion Gain (Typ.)|S21|2f=1GHz11dB
Transition frequency (Typ.)fT-9GHz
Noise Figure (Typ.)NFf=1GHz1.55dB
Documents
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
TA79L09F