RFM03U3CT Radio-frequency power MOSFET

DataSheet
Feature
Application ScopeUHF/VHF band professional radio (520MHz)
PolarityN-ch
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameRF-CST3
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID2.5A
Power DissipationPD7W
Drain-Source voltageVDSS16V
Drain-Source voltageVDSS16V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Output Power (Min)POUTPIN=0.1W
Tc=25degC
VDD=3.6V
f=520MHz
2.3W
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
RFM03U3CT(TE12L)Japan3000yes
Documents
S-parameterS-parameter[Apr,2016] UPDATED(ZIP: 44KB)
Reliability InformationReliability Data[May,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
RFM03U3CT