RFM12U7X Radio-frequency power MOSFET _ BDTIC a Leading Distributor in China

RFM12U7X Radio-frequency power MOSFET

DataSheet

Download Japanese version(PDF:293KB)
Download English version(PDF:191KB)

Feature

Application Scope	UHF/VHF band professional radio (520MHz)
Polarity	N-ch
RoHS Compatible Product(s) (#)	Available
Assembly bases	Japan

Package Information

Package Image
Toshiba Package Name	PW-X
Pins	4
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current	I_D	4	A
Power Dissipation	P_D	20	W
Drain-Source voltage	V_DSS	20	V
Drain-Source voltage	V_DSS	20	V

Electrical Characteristics

Characteristics	Symbol	Condition	Value	Unit
Output Power (Min)	P_OUT	P_IN=1W T_c=25degC V_DD=7.2V f=520MHz	11.5	W

Order Information

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
RFM12U7X(TE12L,Q)	Japan	1000		yes

Documents

S-parameter	S-parameter[Aug,2012] UPDATED	(ZIP: 11KB)
Reliability Information	Reliability Data[May,2016]	(PDF: 160KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Application Note	Application Note[Oct,2011]	(PDF: 1323KB)
Catalog	Radio-Frequency Semiconductors[Feb,2015]	(PDF: 1320KB)
Catalog	Radio-Frequency Semiconductors Diodes[Sep,2006]	(PDF: 2219KB)
Catalog	Radio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006]	(PDF: 2873KB)
Catalog	High-Frequency Semiconductors Power Devices[Mar,2004]	(PDF: 2496KB)

RFM12U7X

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