SSM3J120TU Small-signal MOSFET

DataSheet
Feature
PolarityP-ch
GenerationU-MOSⅣ
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Malaysia / Thailand
Package Information
Package Image
Toshiba Package NameUFM
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-4A
Drain-Source voltageVDSS-20V
Gate-Source voltageVGSS+/-8V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4V0.038Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.049Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.8V0.078Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.5V0.140Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=4V0.028Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=2.5V0.034Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.8V0.047Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.5V0.060Ω
Gate threshold voltage (Max)Vth--1.0V
Gate threshold voltage (Min)Vth--0.3V
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
2SC6135