SSM3J351R Small-signal MOSFET _ BDTIC a Leading Distributor in China

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-3.5	A
Drain-Source voltage	V_DSS	-60	V
Gate-Source voltage	V_GSS	-20/+10	V

Characteristics	Symbol	Condition	Value	Unit
Input capacitance (Typ.)	C_iss	-	660	pF
Total gate charge (Typ.)	Q_g	-	15.1	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	0.134	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4.5V	0.164	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4V	0.184	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=10V	0.107	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=4.5V	0.122	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=4V	0.129	Ω
Gate threshold voltage (Max)	V_th	-	-2.0	V
Gate threshold voltage (Min)	V_th	-	-0.8	V

Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

SSM3J338R