SSM3J35CTC Small-signal MOSFET _ BDTIC a Leading Distributor in China

SSM3J35CTC Small-signal MOSFET

DataSheet

Download Japanese version(PDF:316KB)
Download English version(PDF:198KB)

Feature

Polarity	P-ch
Generation	U-MOSⅦ
RoHS Compatible Product(s) (#)	Available
Assembly bases	Thailand

Package Information

Toshiba Package Name	CST3C
Pins	3

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-0.25	A
Drain-Source voltage	V_DSS	-20	V
Gate-Source voltage	V_GSS	+/-10	V

Electrical Characteristics

Characteristics	Symbol	Condition	Value	Unit
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4.5V	1.4	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=2.5V	2.1	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.8V	2.9	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.5V	4.0	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.2V	20	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=4.5V	1.1	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=2.5V	1.5	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.8V	2.0	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.5V	2.3	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.2V	3.2	Ω
Gate threshold voltage (Max)	V_th	-	-1.0	V
Gate threshold voltage (Min)	V_th	-	-0.3	V

Order Information

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
SSM3J35CTC,L3F(T	Thailand	10000		yes

Documents

Reliability Information	Reliability Data[May,2016]	(PDF: 160KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

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