SSM3J56ACT Small-signal MOSFET

DataSheet
Feature
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesThailand
Package Information
Package Image
Toshiba Package NameCST3
Package CodeSOT-883
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-1.4A
Drain-Source voltageVDSS-20V
Gate-Source voltageVGSS+/-8V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-100pF
Total gate charge (Typ.)Qg-1.6nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.39Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.48Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.8V0.66Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.5V0.9Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.2V4Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=4.5V0.31Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=2.5V0.38Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.8V0.47Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.5V0.56Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.2V0.77Ω
Gate threshold voltage (Max)Vth--1.0V
Gate threshold voltage (Min)Vth--0.3V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
SSM3J56ACT,L3F(TThailand10000yes
Documents
Reliability InformationReliability Data[Apr,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
2SC6026CT