SSM3J56ACT Small-signal MOSFET _ BDTIC a Leading Distributor in China

SSM3J56ACT Small-signal MOSFET

DataSheet

Download Japanese version(PDF:376KB)
Download English version(PDF:257KB)

Feature

Polarity	P-ch
Generation	U-MOSⅥ
RoHS Compatible Product(s) (#)	Available
Assembly bases	Thailand

Package Information

Package Image
Toshiba Package Name	CST3
Package Code	SOT-883
Pins	3
Mounting	Surface Mount

Absolute Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain current	I_D	-1.4	A
Drain-Source voltage	V_DSS	-20	V
Gate-Source voltage	V_GSS	+/-8	V

Electrical Characteristics

Characteristics	Symbol	Condition	Value	Unit
Input capacitance (Typ.)	C_iss	-	100	pF
Total gate charge (Typ.)	Q_g	-	1.6	nC
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4.5V	0.39	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=2.5V	0.48	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.8V	0.66	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.5V	0.9	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.2V	4	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=4.5V	0.31	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=2.5V	0.38	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.8V	0.47	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.5V	0.56	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.2V	0.77	Ω
Gate threshold voltage (Max)	V_th	-	-1.0	V
Gate threshold voltage (Min)	V_th	-	-0.3	V

Order Information

example		MOQ(pcs)	ReliabilityInformation	RoHS
Orderable part number	Assembly bases	MOQ(pcs)	ReliabilityInformation	RoHS
SSM3J56ACT,L3F(T	Thailand	10000		yes

Documents

Reliability Information	Reliability Data[Apr,2016]	(PDF: 160KB)
Environment Information	Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016]	(PDF: 52KB)
Environment Information	Certificate on Content of SVHC of REACH[Apr,2016]	(PDF: 43KB)
Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)

2SC6026CT

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