SSM3K59CTB Small-signal MOSFET

DataSheet
Feature
PolarityN-ch
GenerationU-MOSⅦ-H
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameCST3B
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID2A
Drain-Source voltageVDSS40V
Gate-Source voltageVGSS+/-12V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-130pF
Total gate charge (Typ.)Qg-1.0nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.8V0.420Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.268Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.228Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.8V0.250Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=2.5V0.210Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=4.5V0.185Ω
Gate threshold voltage (Max)Vth-1.2V
Gate threshold voltage (Min)Vth-0.5V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
SSM3K59CTB,L3F(AJapan10000yes
Documents
PSpicePSpice Model[Feb,2016](lib: 3KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
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