SSM4K27CT Small-signal MOSFET _ BDTIC a Leading Distributor in China

Characteristics	Symbol	Rating	Unit
Drain current	I_D	0.5	A
Drain-Source voltage	V_DSS	20	V
Gate-Source voltage	V_GSS	±12	V

Characteristics	Symbol	Condition	Value	Unit
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=1.8V	0.390	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=2.5V	0.260	Ω
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4V	0.205	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=1.8V	0.250	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=2.5V	0.200	Ω
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=4V	0.175	Ω
Gate threshold voltage (Max)	V_th	-	1.1	V
Gate threshold voltage (Min)	V_th	-	0.5	V

Catalog	General-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011]	(PDF: 2608KB)