DataSheetFeature| Polarity | P-ch |
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| Generation | U-MOSⅢ |
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| AEC-Q101 | Conform(*)
*: For detail information, please contact to our sales. |
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| RoHS Compatible Product(s) (#) | Available |
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| Assembly bases | Japan / Thailand |
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Package Information| Package Image |  |
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| Toshiba Package Name | UF6 |
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| Pins | 6 |
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| Mounting | Surface Mount |
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| Absolute Maximum Ratings| Characteristics | Symbol | Rating | Unit |
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| Drain current | ID | -2.1 | A | | Drain-Source voltage | VDSS | -30 | V | | Gate-Source voltage | VGSS | +/-20 | V |
Electrical Characteristics| Characteristics | Symbol | Condition | Value | Unit |
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| Input capacitance (Typ.) | Ciss | - | 120 | pF | | Total gate charge (Typ.) | Qg | - | 2.9 | nC | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 0.216 | Ω | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4V | 0.393 | Ω | | Drain-Source on-resistance (Typ.) | RDS(ON) | |VGS|=10V | 0.165 | Ω | | Drain-Source on-resistance (Typ.) | RDS(ON) | |VGS|=4V | 0.280 | Ω | | Gate threshold voltage (Max) | Vth | - | -2.0 | V | | Gate threshold voltage (Min) | Vth | - | -0.8 | V |
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