SSM6J410TU Small-signal MOSFET

DataSheet
Feature
PolarityP-ch
GenerationU-MOSⅢ
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Thailand
Package Information
Package Image
Toshiba Package NameUF6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-2.1A
Drain-Source voltageVDSS-30V
Gate-Source voltageVGSS+/-20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-120pF
Total gate charge (Typ.)Qg-2.9nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.216Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4V0.393Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=10V0.165Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=4V0.280Ω
Gate threshold voltage (Max)Vth--2.0V
Gate threshold voltage (Min)Vth--0.8V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHSAEC-Q100/AEC-Q101
Orderable part numberAssembly bases
SSM6J410TU(TE85L,FJapan3000-yes-
SSM6J410TU,LXGF(TThailand3000--yes
Documents
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
SSM6P54TU