SSM6J503NU Small-signal MOSFET

DataSheet
Feature
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Thailand
Package Information
Package Image
Toshiba Package NameUDFN6B
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-6A
Drain-Source voltageVDSS-20V
Gate-Source voltageVGSS+/-8V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-840pF
Total gate charge (Typ.)Qg-12.8nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.0324Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.0417Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.8V0.0579Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.5V0.0896Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=4.5V0.0277Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=2.5V0.0331Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.8V0.0406Ω
Drain-Source on-resistance (Typ.)RDS(ON)|VGS|=1.5V0.0486Ω
Gate threshold voltage (Max)Vth--1.0V
Gate threshold voltage (Min)Vth--0.3V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
SSM6J503NU,LF(TThailand3000yes
Documents
PSpicePSpice Model[May,2014](lib: 3KB)
Reliability InformationReliability Data[May,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
SSM6J503NU