SSM6N15AFE Small-signal MOSFET 2 in 1

DataSheet
Feature
PolarityN-ch×2
GenerationU-MOSⅢ
Internal ConnectionIndependent
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Malaysia / Thailand
Package Information
Package Image
Toshiba Package NameES6
JEITASC-107C
Package CodeSOT-563
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.1A
Drain currentID0.1A
Drain current (Q1)ID0.1A
Drain current (Q2)ID0.1A
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS30V
Gate-Source voltageVGSS±20V
Gate-Source voltageVGSS±20V
Gate-Source voltage (Q1)VGSS±20V
Gate-Source voltage (Q2)VGSS±20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=2.5V6.0Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4V3.6Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=2.5V3.5Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4V2.3Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=2.5V6.0Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4V3.6Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=2.5V3.5Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4V2.3Ω
Gate threshold voltage (Q1) (Max)Vth-1.5V
Gate threshold voltage (Q1) (Min)Vth-0.8V
Gate threshold voltage (Q2) (Max)Vth-1.5V
Gate threshold voltage (Q2) (Min)Vth-0.8V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
SSM6N15AFE,LM(TThailand4000yes
Documents
PSpicePSpice Model[May,2015](lib: 3KB)
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
HN1C01FE