SSM6N40TU Small-signal MOSFET 2 in 1

DataSheet
Feature
PolarityN-ch×2
Internal ConnectionIndependent
Component Product (Q1)SSM6N40TU
Component Product (Q2)SSM6N40TU
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Thailand
Package Information
Package Image
Toshiba Package NameUF6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID1.6A
Drain currentID1.6A
Drain current (Q1)ID1.6A
Drain current (Q2)ID1.6A
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS30V
Gate-Source voltageVGSS±20V
Gate-Source voltageVGSS±20V
Gate-Source voltage (Q1)VGSS±20V
Gate-Source voltage (Q2)VGSS±20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4V0.187Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.124Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4V0.129Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=10V0.091Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4V0.187Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=10V0.124Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4V0.129Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=10V0.091Ω
Gate threshold voltage (Q1) (Max)Vth-2.6V
Gate threshold voltage (Q1) (Min)Vth-1.0V
Gate threshold voltage (Q2) (Max)Vth-2.6V
Gate threshold voltage (Q2) (Min)Vth-1.0V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHSAEC-Q100/AEC-Q101
Orderable part numberAssembly bases
SSM6N40TU,LF(TThailand3000yes-
SSM6N40TU,LXGF(TThailand3000-yesyes
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
SSM6P54TU