SSM6N55NU Small-signal MOSFET 2 in 1

DataSheet
Feature
PolarityN-ch×2
GenerationU-MOSⅦ-H
Internal ConnectionIndependent
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Thailand
Package Information
Package Image
Toshiba Package NameUDFN6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID4A
Drain currentID4A
Drain current (Q1)ID4A
Drain current (Q2)ID4A
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS30V
Gate-Source voltageVGSS+/-20V
Gate-Source voltageVGSS+/-20V
Gate-Source voltage (Q1)VGSS+/-20V
Gate-Source voltage (Q2)VGSS+/-20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.064Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.046Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4.5V0.048Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=10V0.033Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4.5V0.064Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=10V0.046Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4.5V0.048Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=10V0.033Ω
Gate threshold voltage (Q1) (Max)Vth-2.5V
Gate threshold voltage (Q1) (Min)Vth-1.3V
Gate threshold voltage (Q2) (Max)Vth-2.5V
Gate threshold voltage (Q2) (Min)Vth-1.3V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHSAEC-Q100/AEC-Q101
Orderable part numberAssembly bases
SSM6N55NU,LF(TThailand3000yes-
SSM6N55NU,LXGF(TThailand3000-yesyes
Documents
PSpicePSpice Model[Nov,2013](lib: 3KB)
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
SSM6P47NU