SSM6N62TU Small-signal MOSFET 2 in 1

DataSheet
Feature
PolarityN-ch×2
GenerationU-MOSⅦ-H
Internal ConnectionIndependent
AEC-Q101Conform(*) *: For detail information, please contact to our sales.
RoHS Compatible Product(s) (#)Available
Assembly basesThailand
Package Information
Package Image
Toshiba Package NameUF6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID0.8A
Drain currentID0.8A
Drain current (Q1)ID0.8A
Drain current (Q2)ID0.8A
Drain-Source voltageVDSS20V
Drain-Source voltageVDSS20V
Drain-Source voltage (Q1)VDSS20V
Drain-Source voltage (Q2)VDSS20V
Gate-Source voltageVGSS±8V
Gate-Source voltageVGSS±8V
Gate-Source voltage (Q1)VGSS±8V
Gate-Source voltage (Q2)VGSS±8V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=1.5V0.173Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=1.8V0.120Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=2.5V0.098Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.085Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=1.5V0.094Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=1.8V0.084Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=2.5V0.074Ω
Drain-Source on-resistance (Q1) (Typ.)RDS(ON)VGS=4.5V0.067Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=1.5V0.173Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=1.8V0.120Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=2.5V0.098Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4.5V0.085Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=1.5V0.094Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=1.8V0.084Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=2.5V0.074Ω
Drain-Source on-resistance (Q2) (Typ.)RDS(ON)VGS=4.5V0.067Ω
Gate threshold voltage (Q1) (Max)Vth-1.0V
Gate threshold voltage (Q1) (Min)Vth-0.4V
Gate threshold voltage (Q2) (Max)Vth-1.0V
Gate threshold voltage (Q2) (Min)Vth-0.4V
Documents
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)
SSM6P54TU