DataSheetFeature| Feature | High ESD protected |
|---|
| Polarity | N-ch |
|---|
| Generation | U-MOSⅦ-H |
|---|
| RoHS Compatible Product(s) (#) | Available |
|---|
| Assembly bases | Thailand |
|---|
Package Information| Package Image |  |
|---|
| Toshiba Package Name | SOT23 |
|---|
| JEDEC | TO-236AB |
|---|
| Package Code | SOT23 |
|---|
| Pins | 3 |
|---|
| Mounting | Surface Mount |
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| Absolute Maximum Ratings| Characteristics | Symbol | Rating | Unit |
|---|
|
| Drain current | ID | 0.4 | A | | Drain-Source voltage | VDSS | 60 | V | | Gate-Source voltage | VGSS | ±20 | V |
Electrical Characteristics| Characteristics | Symbol | Condition | Value | Unit |
|---|
|
| Input capacitance (Typ.) | Ciss | - | 26 | pF | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 1.75 | Ω | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 1.5 | Ω | | Drain-Source on-resistance (Typ.) | RDS(ON) | |VGS|=4.5V | 1.2 | Ω | | Drain-Source on-resistance (Typ.) | RDS(ON) | |VGS|=10V | 1.05 | Ω | | Gate threshold voltage (Max) | Vth | - | 2.1 | V | | Gate threshold voltage (Min) | Vth | - | 1.1 | V |
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