TC58NYG1S3HBAI6 SLC NAND

DataSheet
Feature
Capacity (bit)2G
Tech. node (nm)24
Page size (bit)(2048+128)×8
Block size (bit)(128K+8K)×8
I/O (bit)8
Keyword2Gbit SLC NAND, 1.8V, x8, 24nm, BGA
RoHS Compatible Product(s) (#)Available
Package Information
Toshiba Package NameFBGA
Pins67
Package size6.5mm x 8mm
Pin pitch0.8
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Access Time (1st access) (Max)--25μs
Access Time (Serial Cycle) (Min)--25nsec
Operational TemperatureTopr--40 to 85degC
Supply VoltageVCC-1.70 to 1.95V
Block Erasing Time (Typ.)tBERASE-3.5msec
Program Time (Typ.)tPROG-0.3msec
Documents
CatalogFlash Memory[Mar,2016](PDF: 2484KB)
CatalogTOSHIBA SLC NAND Flash Memory[Jul,2011](PDF: 1628KB)