TH58NVG3S0HBAI4 SLC NAND

DataSheet
Feature
Capacity (bit)8G(4G×2)
Tech. node (nm)24
Page size (bit)(4096+256)×8
Block size (bit)(256K+16K)×8
I/O (bit)8
Keyword8Gbit SLC NAND, 3.3V, x8, 24nm, FBGA
RoHS Compatible Product(s) (#)Available
Package Information
Toshiba Package NameFBGA
Pins63
Package size9mm x 11mm
Pin pitch0.8
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Access Time (1st access) (Max)--25μs
Access Time (Serial Cycle) (Min)--25nsec
Operational TemperatureTopr--40 to 85degC
Supply VoltageVCC-2.7 to 3.6V
Block Erasing Time (Typ.)tBERASE-2.5msec
Program Time (Typ.)tPROG-0.3msec
Documents
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogFlash Memory[Mar,2016](PDF: 2484KB)
CatalogTOSHIBA SLC NAND Flash Memory[Jul,2011](PDF: 1628KB)