TJ150F06M3L Power MOSFET (P-ch single)

DataSheet
Feature
PolarityP-ch
GenerationU-MOSⅥ
AEC-Q101Conform
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NameTO-220SM(W)
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-150A
Power DissipationPD300W
Drain-Source voltageVDSS-60V
Drain-Source voltageVDSS-60V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-12500pF
Total gate charge (Typ.)Qg-420nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.0056Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=6V0.0061Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TJ150F06M3L(T4L,Q)Japan1000yes
Documents
PSpicePSpice Model[May,2014](lib: 3KB)
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TJ150F06M3L