TJ8S06M3L Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopeMotor drivers / Switching regulators
PolarityP-ch
GenerationU-MOSⅥ
AEC-Q101Conform
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Toshiba Package NameDPAK+
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-8A
Power DissipationPD27W
Drain-Source voltageVDSS-60V
Drain-Source voltageVDSS-60V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-890pF
Total gate charge (Typ.)Qg-19nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.104Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=6V0.13Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TJ8S06M3L(T6L1,NQ)Japan2000yes
Documents
PSpicePSpice Model[Apr,2015](lib: 3KB)
Reliability InformationReliability Data[May,2016](PDF: 160KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)