TJ9A10M3 Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopeSwitching regulators
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameTO-220SIS
JEITASC-67
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-9A
Power DissipationPD19W
Drain-Source voltageVDSS-100V
Drain-Source voltageVDSS-100V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-2900pF
Total gate charge (Typ.)Qg-47nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.17Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TJ9A10M3,S4Q(MMalaysia50yes
Documents
Reliability InformationReliability Data[Jan,2013](PDF: 87KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TTD1415B