TK17E80W Power MOSFET (N-ch 700V《VDSS)

DataSheet
Feature
Application ScopeSwitching regulators
PolarityN-ch
GenerationDTMOSⅣ
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Package Image
Toshiba Package NameTO-220
Pins3
MountingThrough Hole
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID17A
Power DissipationPD180W
Drain-Source voltageVDSS800V
Drain-Source voltageVDSS800V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-2050pF
Total gate charge (Typ.)Qg-32nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.29Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TK34E10N1